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Cutoff Region
Triode/ Linear/ Ohmic Region
Saturation Region
Region 2
Region 3
VGS < Vto
no channel formed between D and S
iD - VDS characteristics of the MOSFET
Example
Example
iD - VDS characteristics of the MOSFET
VGS > Vto
induce the channel, current iD flow from D to S
VDS < VGS - Vto
uniform channel
iD - VDS characteristics of the MOSFET
Example
- iD can be controlled by the ration of W/L
- MOSFET is operating like a linear resistor whose value is controlled by VGS
- iD remain constant at the value reached for VDS = VGS - Vto. Thus the MOSFET is said to have entered the saturation region of operation.
VGS > Vto
induce the channel, current iD flow from D to S
VDS > VGS - Vto
drain current iD saturates
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